mac97a8 MAC97A6 c c 1. description logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. product availability: mac97a8 in sot54 (to-92) MAC97A6 in sot54 (to-92) available on request - contact your sales representative. 2. features n blocking voltage to 600 v (mac97a8) n rms on-state current to 0.6 a n sensitive gate in all four quadrants n low cost package. 3. applications n general purpose bidirectional switching n phase control applications n solid state relays. 4. pinning information table 1: pinning - sot54 (to-92), simpli?ed outline and symbol pin description simpli?ed outline symbol 1 main terminal 2 sot54 (to-92) 2 gate 3 main terminal 1 1 3 2 msb0 3 mbl305 1 3 2 1 of 9 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
5. quick reference data 6. limiting values table 2: quick reference data symbol parameter conditions typ max unit v drm repetitive peak off-state voltage mac97a8 MAC97A6 t j =25to125 c - 600 v t j =25to125 c - 400 v i t(rms) on-state current (rms value) full sine wave; t lead 50 c; figure 5 - 0.6 a i tsm non-repetitive peak on-state current - 8.0 a table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v drm repetitive peak off-state voltage mac97a8 MAC97A6 t j =25to125 c - 600 v t j =25to125 c - 400 v i t(rms) on-state current (rms value) full sine wave; t lead 50 c; figure 5 - 0.6 a i tsm non-repetitive peak on-state current full sine wave; t j =25 c prior to surge t=20ms - 8.0 a t = 16.7 ms - 8.8 a i 2 ti 2 t for fusing t = 10 ms - 0.32 a 2 s di t /dt repetitive rate of rise of on-state current after triggering i tm = 1.0 a; i g = 0.2 a; di g /dt = 0.2 a/ m s t2+ g+ - 50 a/ m s t2+ g -- 50 a/ m s t2 - g -- 50 a/ m s t2 - g+ - 10 a/ m s i gm gate current (peak value) t = 2 m s max - 1a v gm gate voltage (peak value) t = 2 m s max 5 v p gm gate power (peak value) t = 2 m s max - 5w p g(av) average gate power t case =80 c; t = 2 m s max - 0.1 w t stg storage temperature - 40 +150 c t j operating junction temperature - 40 +125 c 2 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com mac97a8 MAC97A6 product specification
7. thermal characteristics 7.1 transient thermal impedance table 4: thermal characteristics symbol parameter conditions value unit r th(j-lead) thermal resistance from junction to lead full cycle 60 k/w half cycle 80 k/w r th(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; lead length = 4 mm; figure 1 150 k/w . fig 1. transient thermal impedance from junction to ambient as a function of pulse duration. t p (s) 10 10 -2 10 -4 10 -5 10 -3 10 -1 1 z th(j-a) (k/w) 10 3 10 2 10 1 t p p t 003aaa029 3 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com mac97a8 MAC97A6 product specification
8. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit static characteristics i gt gate trigger current v d = 12 v; i t = 0.1 a; figure 8 t2+ g+ - 15ma t2+ g -- 25ma t2 - g -- 25ma t2 - g+ - 47ma i l latching current v d = 12 v; i gt = 0.1 a; figure 9 t2+ g+ - 110ma t2+ g -- 510ma t2 - g -- 110ma t2 - g+ - 210ma i h holding current v d = 12 v; i gt = 0.1 a; figure 10 - 110ma v t on-state voltage i t = 0.85 a; figure 11 - 1.4 1.9 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a; figure 7 - 0.9 2 v v d =v drm ; i t = 0.1 a; t j = 110 c 0.1 0.7 - v i d off-state leakage current v d =v drm (max) ; t j = 110 c - 3 100 m a dynamic characteristics dv d /dt critical rate of rise of off-state voltage v d = 67% of v dm(max) ; t case = 110 c; exponential waveform; gate open circuit; figure 12 30 45 - v/ m s dv com /dt critical rate of rise of commutation voltage v d = rated v drm ;t case =50 c; i tm = 0.84 a; commutating di/dt = 0.3 a/ms - 5 - v/ m s t gt gate controlled turn-on time i tm = 1.0 a; v d =v drm(max) ; i g = 25 ma; di g /dt=5a/ m s - 2 -m s 4 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com mac97a8 MAC97A6 product specification
a = conduction angle t p 20 ms fig 2. maximum on-state dissipation as a function of rms on-state current; typical values. fig 3. maximum permissible non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; typical values. n = number of cycles at f = 50 hz fig 4. maximum permissible non-repetitive peak on-state current as a function of number of cycles for sinusoidal currents; typical values. fig 5. maximum permissible rms current as a function of lead temperature; typical values. 1 0.4 0.2 0 0.6 0.8 1 1.2 p tot (w) i t(rms) (a) 0 0.2 0.4 0.6 0.8 30 60 90 120 a = 180 003aaa036 10 3 10 2 10 1 10 -1 10 -2 10 -4 10 -3 10 -5 t p (s) i tsm (a) 003aaa040 t i tsm time i t j initial = 25 o c max t 10 8 6 4 2 0 11010 2 10 3 i tsm (a) n 003aaa038 t i tsm time i t j initial = 25 o c max t 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 t lead ( o c) i t(rms) (a) 003aaa037 5 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com mac97a8 MAC97A6 product specification
f = 50 hz; t lead 50 c fig 6. maximum permissible repetitive rms on-state current as a function of surge duration for sinusoidal currents; typical values. fig 7. normalized gate trigger voltage as a function of junction temperature; typical values. fig 8. normalized gate trigger current as a function of junction temperature; typical values. fig 9. normalized latching current as a function of junction temperature; typical values. 3 2.5 2 1.5 1 0.5 0 i t(rms) (a) 10 -3 10 -2 1 10 t surge (s) 003aaa041 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -10 40 90 140 a t j ( o c) 003aaa039 a v gt tj () v gt 25 c () ----------------------- - = -60 -20 20 60 100 140 t j ( o c) 1.5 1 0.5 0 2 2.5 t2+ g+ t2 - g+ t2 - g - t2+ g - 003aaa030 a -60 -20 20 60 100 140 t j ( o c) 1.5 1 0.5 0 2 2.5 003aaa031 a a i gt tj () i gt 25 c () --------------------- - = a i ltj () i l25c () ------------------ = 6 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com mac97a8 MAC97A6 product specification
fig 10. normalized holding current as a function of junction temperature; typical values. fig 11. on-state current as a function of on-state voltage; typical and maximum values. fig 12. critical rate of rise of off-state voltage as a function of junction temperature; typical values. -60 -20 20 60 100 140 t j ( o c) 1.5 1 0.5 0 2 2.5 003aaa032 a 2 (a) i t 2.0 1.6 1.2 0.8 0.4 0 0.5 1 1.5 2.0 003aaa033 typ max max v t (v) t j = 125 o c t j = 25 o c a i htj () i h25c () ------------------- = 0 10 3 10 2 10 1 100 140 dv d /dt (v/ m s) t j ( o c) 003aaa034 20 40 60 80 120 7 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com mac97a8 MAC97A6 product specification
9. package outline fig 13. sot54 (to-92). unit a references outline version european projection issue date iec jedec eiaj mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) 2.5 b 1 0.66 0.56 dimensions (mm are the original dimensions) note 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 to-92 sc-43 97-02-28 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads sot54 e 1 e 1 2 3 8 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com mac97a8 MAC97A6 product specification
10. revision history table 6: revision history rev date cpcn description 01 20010329 - product speci?cation; initial version 9 of 9 4008-318-123 sales@twtysemi.com http://www.twtysemi.com mac97a8 MAC97A6 product specification
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